aug.1999 20k stb strobe input 2k 380 1.6k input com v cc output gnd the six circuits share the stb, com, v cc , gnd. the diodes shown by broken line are parasite diodes and must not be use. unit : w 1 strobe input stb ? input output in1 ? in2 ? in3 ? in4 ? in5 ? in6 ? com common gnd 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 ? o6 ? o5 ? o4 ? o3 ? o2 ? o1 v cc 16p4(p) outline 16p2n-a(fp) pin configuration (top view) mitsubishi semiconductor m54534p/fp 6-unit 320ma transistor array with clamp diode and strobe description m54534p and M54534FP are six-circuit transistor arrays. the circuits are made of npn transistors. both the semicon- ductor integrated circuits perform high-current driving with extremely low input-current supply. features l medium breakdown voltage (bv ceo 3 20v) l high-current driving (ic(max) =320ma) l with clamping diodes l wide input voltage range (v i = C25 to +20v) l wide operating temperature range (ta = C20 to +75 c) l with strobe input application drives of relays and printers, digit drives of indication ele- ments (leds and lamps). function the m54534p and M54534FP each have six circuits consist- ing of npn transistors. each input has a diode and 1.6k w esistor in series. each input is connected, and each output is connected spike-killer clamping diode, emitters of each transistor is connected to gnd (pin 8), strobe input is con- nected to (pin 1), clamping diode is connected com pin (pin 9) and v cc is connected to the pin 16 in common. the collector current is 320ma maximum. collector-emitter supply voltage is 20v maximum. M54534FP is enclosed in a molded small flat package, en- abling space-saving design. circuit schematic (each circuit) supply voltage collector-emitter voltage collector current input voltage strobe input voltage clamping diode forward current clamping diode reverse voltage power dissipation operating temperature storage temperature v v ma v v ma v w c c 10 C0.5 ~ +20 320 C25 ~ +20 C0.5~ +20 320 20 1.47/1.00 C20 ~ +75 C55 ~ +125 v cc v ceo i c v i v (stb) i f v r p d t opr t stg ratings symbol parameter conditions unit absolute maximum ratings (unless otherwise noted, ta = C20 ~ +75 c) output, h current per circuit output, l ta = 25 c, when mounted on board
aug.1999 v i = 3.2v v i(stb) = 2.4v mitsubishi semiconductor m54534p/fp 6-unit 320ma transistor array with clamp diode and strobe recommended operating conditions (unless otherwise noted, ta = C20 ~ +75 c) 300 150 v v v cc v o v il v ih(stb) v il(stb) 3 0 3.2 0 2.4 0 8 20 i c 0 0 ma parameter limits min typ max symbol unit supply voltage output voltage collector current per channel h input voltage l input voltage h input voltage (strobe input) l input voltage (strobe input) v cc = 6.5v, duty cycle p : no more than 25% fp : no more than 15% v cc = 6.5v, duty cycle p : no more than 65% fp : no more than 35% v ih 18 0.7 18 0.2 v v v v functional table in l h l h stb l l h h out h h h l 0.3 0.15 0.5 C7.9 1.4 120 3000 0.85 0.5 1.4 C20 C20 20 2.4 100 200 20 1000 collector-emitter breakdown voltage input reverse current strobe input current strobe input reverse current clamping diode forward voltage clamping diode reverse current supply current i ir i i(stb) i r(stb) v f i r i cc v cc = 8v, v i = 3.2v, v i(stb) = 2.4v v cc = 8v, v i = C25v v cc = 8v, v i = 3.2v (all input), v i(stb) = 0.2v v cc = 8v, v i = 0v, v i(stb) = 20v i f = 320ma v r = 20v v cc = 8v, v i = 3.2v (all input), v i(stb) = 2.4v v ce = 4v, v cc = 6.5v, i c = 300ma, ta = 25 c, v i(stb) = 2.4v v m a ma m a v m a ma i i v ce (sat) v + : the typical values are those measured under ambient temperature (ta) of 25 c. there is no guarantee that these values are obtained under any conditions. v cc = 8v, v i = 3.2v, v i(stb) = 0.2v, i ceo = 100 m a symbol unit parameter test conditions limits min typ + max collector-emitter saturation voltage electrical characteristics (unless otherwise noted, ta = C20 ~ +75 c) v (br) ceo input current v cc = 6.5v, i c = 250ma v cc = 3v, i c = 120ma ma ns ns 22 1200 symbol unit parameter test conditions limits min typ max switching characteristics (unless otherwise noted, ta = 25 c) turn-on time turn-off time c l = 15pf (note 1) t on t off h fe dc amplification factor
aug.1999 ton 50% 50% 50% 50% toff input output pg output 50 w (1) pulse generator (pg) characteristics : prr = 1khz, tw = 10 m s, tr = 6ns, tf = 6ns, z o = 50 w v p = 3.2v p-p (2) input-output conditions : r l = 40 w , v o = 10v, v cc = v stb = 6.5v (3) electrostatic capacity c l includes floating capacitance at connections and input capacitance at probes c l measured device open stb input v o v cc r l mitsubishi semiconductor m54534p/fp 6-unit 320ma transistor array with clamp diode and strobe typical characteristics timing diagram note 1 test circuit ambient temperature ta ( c) power dissipation pd (w) 0 0 0.5 1.0 1.5 2.0 25 50 75 100 duty-cycle-collector characteristics (m54534p) duty cycle (%) ?he collector current values represent the current per circuit. ?epeated frequency 3 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. ?a = 25 c, v cc = 6.5v 0 0 100 200 300 400 5 1 ~ 3 6 4 20 40 60 80 100 collector current ic (ma) duty cycle (%) 0 0 100 200 300 400 1 , 2 5 6 3 4 20 40 60 80 100 collector current ic (ma) duty-cycle-collector characteristics (m54534p) ?he collector current values represent the current per circuit. ?epeated frequency 3 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. ?a = 75 c, v cc = 6.5v thermal derating factor characteristics m54534p M54534FP output saturation voltage collector current characteristics output saturation voltage v ce (sat) (v) collector current ic (ma) 0 100 200 300 400 0 0.1 0.2 0.3 0.4 0.5 v i = 3.2v v cc = 3v v stb = 2.4v ta = ?0 c ta = 25 c ta = 75 c
aug.1999 mitsubishi semiconductor m54534p/fp 6-unit 320ma transistor array with clamp diode and strobe 5 6 duty cycle (%) 3 4 collector current ic (ma) 1 , 2 5 6 0 0 100 200 300 400 20 40 60 80 100 0 0 100 200 300 400 20 40 60 80 100 duty cycle (%) 1 2 3 4 collector current ic (ma) duty-cycle-collector characteristics (M54534FP) duty-cycle-collector characteristics (M54534FP) ?he collector current values represent the current per circuit. ?epeated frequency 3 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. ?a = 25 c, v cc = 6.5v ?he collector current values represent the current per circuit. ?epeated frequency 3 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. ?a = 75 c, v cc = 6.5v dc amplification factor collector current characteristics grounded emitter transfer characteristics input characteristics input voltage v i (v) collector current ic (ma) input current i i (ma) input voltage v i (v) dc amplification factor h fe 10 1 10 2 10 3 3 5 7 10 4 3 5 7 10 2 357 10 3 357 v cc = 6.5v, v i(stb) = 2.4v v ce = 4v ta = ?0 c ta = 25 c ta = 75 c v cc = 6.5v, v i(stb) = 2.4v v ce = 4v ta = ?0 c ta = 25 c ta = 75 c v cc = 8v v stb = 2.4v ta = ?0 c ta = 25 c ta = 75 c 0 100 200 300 400 01234 0 2 4 6 8 10 020 51015 collector current ic (ma) supply current characteristics (common) supply voltage v cc (v) supply current i cc (ma) v stb = 2.4v v i = 3.2v ta = ?0 c ta = 25 c ta = 75 c 0 50 100 150 200 0246810
aug.1999 mitsubishi semiconductor m54534p/fp 6-unit 320ma transistor array with clamp diode and strobe clamping diode characteristics forward bias voltage v f (v) forward bias current i f (ma) ta = ?0 c ta = 25 c ta = 75 c 0 100 200 300 400 0 0.5 1.0 1.5 2.0
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